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inchange semiconductor product specification silicon npn power transistors 2sc4883 2SC4883A description with to-220f package complement to type 2sa1859/1859a applications for audio output driver and tv velocity-modulation applications pinning pin description 1 base 2 collector 3 emitter absolute maximum ratings (ta=25 ) symbol parameter conditions value unit 2sc4883 150 v cbo collector-base voltage 2SC4883A open emitter 180 v 2sc4883 150 v ceo collector-emitter voltage 2SC4883A open base 180 v v ebo emitter-base voltage open collector 6 v i c collector current 2 a i b base current 1 a p c collector dissipation t c =25 20 w t j junction temperature 150 t stg storage temperature -55~150 fig.1 simplified outline (to-220f) and symbol
inchange semiconductor product specification 2 silicon npn power transistors 2sc4883 2SC4883A characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit 2sc4883 150 v (br)ceo collector-emitter breakdown voltage 2SC4883A i c =10ma ; i b =0 180 v v cesat collector-emitter saturation voltage i c =0.7a;i b =70ma 1.0 v 2sc4883 v cb =150v;i e =0 10 a i cbo collector cut-off current 2SC4883A v cb =180v;i e =0 10 a i ebo emitter cut-off current v eb =6v; i c =0 10 a h fe dc current gain i c =0.7a ; v ce =10v 60 240 f t transition frequency i c =-0.7a ; v ce =12v 120 mhz c ob output capacitance i e =0 ; v cb =10v;f=1mhz 30 pf switching time t on turn-on time 0.50 s t s storage time 1.50 s t f fall time i c =1a ;i b1 =-i b2 =0.1a v cc =20v ,r l =20 0.50 s
inchange semiconductor product specification 3 silicon npn power transistors 2sc4883 2SC4883A package outline fig.2 outline dimensions
inchange semiconductor product specification 4 silicon npn power transistors 2sc4883 2SC4883A

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